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TA2160FNG データシート(PDF) 6 Page - Toshiba Semiconductor |
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TA2160FNG データシート(HTML) 6 Page - Toshiba Semiconductor |
6 / 17 page TA2160FNG 2004-05-11 6 Application Note 1. Preamplifier Stage Output DC voltage of preamplifier Output DC voltage of preamplifier is determined by external resistors R1 and R2 as shown in Figure 1. VO (PRE) = VREF − ∆V × (R2/R1 + 1) • VREF = 0.73 V (typ.) VREF is changed when resistance is connected between RF OUT terminal and VREF IN terminal (Refer to application note 3 (1)). • ∆V is an offset voltage which is designed to 28.6 mV. It is as follows in case that the DC voltage is calculated by the constant of a test circuit. VO (PRE) = 0.73 V − 28.6 mV (200 kΩ/22 kΩ + 1) = 0.44 V Output DC voltage of preamplifier should be fixed about VCC/2, because preamplifier get a enough dynamic range. 2. Power Amplifier Stage (1) Input of power amplifier Each input signal should be applied through a capacitor. In case that DC current or DC voltage is applied to each amplifier, the internal circuit has unbalance and the each amplifier doesn’t operate normally. It is advised that input signal refer to VREF voltage, in order to reduce a pop noise or low frequency leak. (2) Bass boost function (a) System This IC has the bass boost function in power amplifier stage. After this system adds the low frequency ingredient of side amplifier, it is applied into the center amplifier. And the bass boost level is controlled by the variable impedance circuit (Figure 2) • Flow of the bass boost signal Variable impedance circuit → Boost amplifier → Center amplifier • Flow of the bass boost level Output of center amplifier → AGC DET (level detection) → Variable impedance circuit operation The system of treble boost function is realized by frequency characteristic adjustment of the side amplifier. VREF R1 R2 ∆V = 28.6 mV Figure 1 Output DC Voltage of Preamplifier |
同様の部品番号 - TA2160FNG |
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同様の説明 - TA2160FNG |
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