TA76432FT/FC/F/FR/S

2006-11-06

4

Characteristics

Symbol

Rating

Unit

Cathode voltage

20

V

Cathode current

20

mA

Cathode-anode reverse current

10

mA

Reference voltage

7

V

Reference current

50

μA

Reference-anode reverse current

10

mA

TA76432FT

0.45 (Note 1)

0.2

TA76432FC

0.38 (Note 2)

TA76432F/FR

0.5

Power dissipation

TA76432S

0.8

W

TA76432FT

277 (Note 1)

625

TA76432FC

328 (Note 2)

TA76432F/FR

250

Thermal resistance

TA76432S

156

ºC/W

Operating temperature

−40∼85

ºC

Junction temperature

150

ºC

Storage temperature

−55∼150

ºC

Note 1: Glass epoxy board mounting: 30 mm

× 30 mm × 0.8 mmt (Cu pad area 35 mm

2

)

Note 2: Glass epoxy board mounting: 30 mm

× 30 mm × 0.8 mmt (Cu pad area 50 mm

2

)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Recommended Operating Conditions

Characteristics

Symbol

Min

Typ.

Max

Unit

Cathode voltage

⎯

19

V

Cathode current

0.5

⎯

15

mA

Operating temperature

−40

⎯

85

°C