2N2102 datasheet(2/4 Pages) STMICROELECTRONICS

部品番号	2N2102

部品情報	EPITAXIAL PLANAR NPN

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

30

150

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICBO

Collector Cut-off

Current (IE = 0)

VCB = 60 V

TC = 150

oC

2

nA

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

5

nA

V(BR)CBO

Collector-Base

Breakdown Voltage

(IE = 0)

IC = 100

µA

120

V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 30 mA

65

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

0.5

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 150 mA

IB = 15 mA

1.1

V

hFE

∗

DC Current Gain

IC = 10

µA

VCE = 10 V

IC = 100

µA

VCE = 10 V

IC = 10 mA

VCE = 10 V

IC = 150 mA

VCE = 10 V

IC = 500 mA

VCE = 10 V

IC = 1 A

VCE = 10 V

10

20

35

40

25

10

120

hfe

∗

High Frequency

Current Gain

IC = 50 mA

VCE = 10 V

f = 20 MHz

6

NF

Noise Figure

IC = 300

µA VCE = 10 V f = 1 KHz

BW = 1 Hz

Rg = 510

Ω

8dB

CCBO

Collector-Base

Capacitance

IE = 0

VCB = 10 V

f = 1MHz

15

pF

CEBO

Emitter-Base

Capacitance

IC = 0

VEB = 0.5 V

f = 1MHz

80

pF

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

2N2102

2/4

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