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TLYU113P データシート(PDF) 2 Page - Toshiba Semiconductor |
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TLYU113P データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page TLOU113P(F),TLSU113P(F),TLYU113P(F) 2007-10-01 2 Electrical Characteristics (Ta = 25°C) Typ.Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product λp Δλ IF Min Typ. IF Typ. Max IF Max VR TLOU113P(F) (612) 15 20 272 900 20 2.0 2.4 20 50 4 TLSU113P(F) (636) 17 20 272 700 20 2.0 2.4 20 50 4 TLYU113P(F) (590) 13 20 153 500 20 2.1 2.5 20 50 4 Unit nm mA mcd mA V mA μA V Precaution Please be careful of the followings • Soldering temperature: 260°C max Soldering time: 3 s max (Soldering portion of lead: Up to 1.6 mm from the body of the device) • If the lead is formed, the lead should be formed up to 1.6 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
同様の部品番号 - TLYU113P |
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同様の説明 - TLYU113P |
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