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2N5322 データシート(PDF) 1 Page - STMicroelectronics |
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2N5322 データシート(HTML) 1 Page - STMicroelectronics |
1 / 4 page 2N5322 2N5323 SMALL SIGNAL PNP TRANSISTORS s SILICON EPITAXIAL PLANAR PNP TRANSISTORS s MEDIUM POWER AMPLIFIER s NPN COMPLEMENTS ARE 2N5320 AND 2N5321 DESCRIPTION The 2N5322 and 2N5323 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN types are respectively the 2N5320 and 2N5321 INTERNAL SCHEMATIC DIAGRAM June 1997 TO-39 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5322 2N5323 VCBO Collector-Base Voltage (IE = 0) -100 -75 V VCEV Collector-Emitter Voltage (VBE = -1.5V) -100 -75 V VCEO Collector-Emitter Voltage (IB = 0) -75 -50 V VEBO Emitter-Base Voltage (IC = 0) -6 -5 V IC Collector Current -1.2 A ICM Collector Peak Current -2 A IB Base Current -1 A Ptot Total Dissipation at Tamb = 25 oC1 W Ptot Total Dissipation at Tc = 25 oC10 W Tstg, Tj Storage and Junction Temperature -65 to 200 oC 1/4 |
同様の部品番号 - 2N5322 |
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同様の説明 - 2N5322 |
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