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TS1581 データシート(PDF) 6 Page - Taiwan Semiconductor Company, Ltd

部品番号 TS1581
部品情報  5A Dual Input LDO
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メーカー  TSC [Taiwan Semiconductor Company, Ltd]
ホームページ  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TS1581 データシート(HTML) 6 Page - Taiwan Semiconductor Company, Ltd

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TS1581
5A Dual Input LDO
6/9
Version: A07
Application Information (Continue)
Protection Diode
In normal operation TS1581 family does not need any protection diodes between the Adjust pin and the output and
from the output to the input to prevent die overstress. Internal resistors are limiting the internal current paths on the
Adjust pin. Therefore even with bypass capacitors on the Adjust pin no protection diode is needed to ensure device
safety under short-circuit conditions. The Adjust pin can be driver on a transient basis +/-7V with respect to the output
without any device degradation.
A protection diode between the Output pin and Vpower pin is not usually needed. Microsecond surge currents of 50A
to 100A can be handled by the internal diode between the Output pin and Vpower pin of the device. In normal
operations it is difficult to get those values of surge currents even with the use of large output capacitances. Only with
high value output capacitors, such as 1000uF to 5000uF and the Vpower pin is instantaneously shorted to ground,
damage can occur. A diode from output to input is recommended.
If TS1581 is connected as a single supply device with the control and power input ins shorted together the internal
diode between the output and the power input pin will protect the control input pin.
Thermal Considerations
The TS1581 family have internal power and thermal limiting circuit designed to protect the device under overload
conditions. However maximum junction temperature ratings should not be exceeded under continuous normal load
conditions. Careful consideration must be given to all sources of thermal resistance from junction to ambient, including
junction-to-case, case-to-heat sink interface and heat sink resistance itself. Junction temperature of the Control section
can urn up to125ºC. Junction temperature of the Power section can run up to 150ºC. Due to the thermal gradients
between the power transistor and the control circuitry there is a significant difference in thermal resistance between the
Control and Power sections.
Virtually all the power dissipated by the device is dissipated in the power transistor. The temperature rise in the power
transistor will be greater than the temperature rise in the Control section making the thermal resistance lower in the
Control section. At power levels below 12W the temperature gradient will be less than 25ºC and the maximum ambient
temperature will be determined by the junction temperature of the Control section. This is due to the lower maximum
junction temperature in the Control section. At power levels above 12W the temperature gradient will be greater than
25ºC and the maximum ambient temperature will be determined by the Power section. In both cases the junction
temperature is determined by the total power dissipated in the device. For most low dropout applications the power
dissipation will be less than 12W.
The power in the device is made up of two components: the power in the output transistor and the power in the control
circuit.
The power in the control circuit is negligible.
The power in the control circuit is equal to:
Pcontrol = ( Vcontrol – Vout ) ( Icontrol )
Where Icontrol is equal Iout / 100 (typ)
The power in the out transistor is equal to:
Poutput = ( Vpower – Vout ) ( Iout )
The total power is equal to:
Ptotal = Pcontrol + Poutput
Junction-to-case thermal resistances is specified from the IC junction to the bottom of the case directly below the die.
This is the lowest resistance path for the heat flow. In order to ensure the best possible thermal flow this area of the
package to the heat sink proper mounting is required. Thermal compound at the case-to-heat sink interface is
recommended. A thermally conductive spacer can be used, if the case of the device must be electrically isolated, but
its added contribution to thermal resistance has to be considered.


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