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TS13007BCZ データシート(PDF) 2 Page - Taiwan Semiconductor Company, Ltd |
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TS13007BCZ データシート(HTML) 2 Page - Taiwan Semiconductor Company, Ltd |
2 / 5 page TS13007B High Voltage NPN Transistor 2/5 Version: A07 Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Collector-Base Voltage IC =1mA, IB =0 BVCBO 700 -- -- V Collector-Emitter Breakdown Voltage IC =10mA, IE =0 BVCEO 400 -- -- V Emitter-Base Breakdown Voltage IE =1mA, IC =0 BVEBO 9 -- -- V Collector Cutoff Current VCE =400V, IB=0 ICEO -- -- 1 mA Collector Cutoff Current VCB =700V, IE =0 ICBO -- -- 1 mA Emitter Cutoff Current VEB = 9V, IC =0 IEBO -- -- 1 mA Collector-Emitter Saturation Voltage IC=2A, IB =0.4A IC=5A, IB =1A IC=8A, IB =2A VCE(SAT)1 VCE(SAT)2 VCE(SAT)3 -- -- -- -- -- -- 1 1.5 3 V Base-Emitter Saturation Voltage IC=2A, IB =0.4A IC=5A, IB =1A VBE(SAT)1 VBE(SAT)2 -- -- -- -- 1.2 1.6 V DC Current Gain VCE =5V, IC = 2A VCE =5V, IC = 5A hFE 20 5 -- -- 40 30 Dynamic Frequency VCE =10V, IC =0.5A fT 4 -- -- MHz Output Capacitance VCB =10V, f =0.1MHz Cob -- 180 -- pF Resistive Load Switching Time (Ratings) Delay Time td -- 0.06 0.1 uS Rise Time tr 0.45 1 uS Storage Time tSTG -- 2.8 3 uS Fall Time VCC =125V, IC =5A, IB1 =IB2=1A, tP =25uS Duty Cycle ≤1% tf -- 0.3 0.7 uS Note: pulse test: pulse width ≤300uS, duty cycle ≤2% |
同様の部品番号 - TS13007BCZ |
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同様の説明 - TS13007BCZ |
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