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AM2729-125 データシート(PDF) 1 Page - STMicroelectronics |
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AM2729-125 データシート(HTML) 1 Page - STMicroelectronics |
1 / 6 page RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .400 x .500 2LFL (S038) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . LOW THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 125 W MIN. WITH 7.0 dB GAIN DESCRIPTION The AM2729-125 device is a high power silicon bipolar NPN transistor specifically designed for medium pulse S-Band radar output and driver applications. This device is characterized at 50 µsec pulse width and 10% duty cycle, but is capable of op- eration over a range of pulse widths, duty cycles and temperatures. Low RF thermal resistance, refractory/gold metallization and computerized automatic wire bonding techniques ensure high reliability and product consistency (including phase characteristics). The AM2729-125 is supplied in the BIGPAC ™ Hermetic Metal/Ceramic package with internal In- put/Output impedance matching circuitry, and is intended for military and other high reliability ap- plications. PIN CONNECTION BRANDING 2729-125 ORDER CODE AM2729-125 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 75°C) 500 W IC Device Current* 16 A VCC Collector-Supply Voltage* 45 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C RTH(j-c) Junction-Case Thermal Resistance* 0.35 °C/W *Applies only to rated RF amplifier operation AM2729-125 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA |
同様の部品番号 - AM2729-125 |
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同様の説明 - AM2729-125 |
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