August 1992

SPECIALITY AVIONICS/JTIDS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.400 x .400 2LFL (S036)

hermetically sealed

.

REFRACTORY/GOLD METALLIZATION

.

EMITTER SITE BALLASTED

.

15:1 VSWR CAPABILITY

.

LOW RF THERMAL RESISTANCE

.

INPUT/OUTPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC HERMETIC PACKAGE

.

= 30 W MIN. WITH 7.8 dB GAIN

DESCRIPTION

The AM80912-030 device is a high power Class C

transistor specifically designed for JTIDS pulsed out-

put and driver applications.

This device is capable of operation over a wide range

of pulse widths, duty cycles and temperatures and is

capable of withstanding 15:1 output VSWR at rated

RF conditions.

Low RF thermal resistance and computerized auto-

matic wire bonding techniques ensure high reliability

and product consistency.

The AM80912-030 is supplied in the hermetic met-

al/ceramic package with internal input matching

structures.

PIN CONNECTION

BRANDING

80912-30

ORDER CODE

AM80912-030

= 25°C)

Junction-Case Thermal Resistance

2.2

°C/W

*Applies only to rated RF amplifier operation.

AM80912-030

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 85°C)

75

W

Collector Current*

3.5

A

Collector-Supply Voltage*

40

V

Junction Temperature (Pulsed RF Operation)

250

°C

Storage Temperature

− 65 to +200

°C

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