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AM80912-030 データシート(PDF) 1 Page - STMicroelectronics |
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AM80912-030 データシート(HTML) 1 Page - STMicroelectronics |
1 / 6 page August 1992 SPECIALITY AVIONICS/JTIDS APPLICATIONS RF & MICROWAVE TRANSISTORS .400 x .400 2LFL (S036) hermetically sealed . REFRACTORY/GOLD METALLIZATION . EMITTER SITE BALLASTED . 15:1 VSWR CAPABILITY . LOW RF THERMAL RESISTANCE . INPUT/OUTPUT MATCHING . OVERLAY GEOMETRY . METAL/CERAMIC HERMETIC PACKAGE . POUT = 30 W MIN. WITH 7.8 dB GAIN DESCRIPTION The AM80912-030 device is a high power Class C transistor specifically designed for JTIDS pulsed out- put and driver applications. This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and is capable of withstanding 15:1 output VSWR at rated RF conditions. Low RF thermal resistance and computerized auto- matic wire bonding techniques ensure high reliability and product consistency. The AM80912-030 is supplied in the hermetic met- al/ceramic package with internal input matching structures. PIN CONNECTION BRANDING 80912-30 ORDER CODE AM80912-030 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) RTH(j-c) Junction-Case Thermal Resistance 2.2 °C/W *Applies only to rated RF amplifier operation. AM80912-030 1. Collector 3. Emitter 2. Base 4. Base THERMAL DATA Symbol Parameter Value Uni t PDISS Power Dissipation* (TC ≤ 85°C) 75 W IC Collector Current* 3.5 A VCC Collector-Supply Voltage* 40 V TJ Junction Temperature (Pulsed RF Operation) 250 °C TSTG Storage Temperature − 65 to +200 °C 1/6 |
同様の部品番号 - AM80912-030 |
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同様の説明 - AM80912-030 |
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