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FSBB20CH60F データシート(PDF) 6 Page - Fairchild Semiconductor |
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FSBB20CH60F データシート(HTML) 6 Page - Fairchild Semiconductor |
6 / 16 page 6 www.fairchildsemi.com FSBB20CH60F Rev. D Electrical Characteristics (T J = 25°C, Unless Otherwise Specified) Inverter Part Note: 3. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For the detailed information, please see Figure 4. Figure 4. Switching Time Definition Symbol Parameter Conditions Min. Typ. Max. Units VCE(SAT) Collector-Emitter Saturation Voltage VCC = VBS = 15V VIN = 5V IC =20A, TJ = 25°C - - 2.3 V VF FWD Forward Voltage VIN = 0V IC = 20A, TJ = 25°C - - 2.1 V HS tON Switching Times VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) -0.48 - µs tC(ON) -0.30 - µs tOFF -0.93 - µs tC(OFF) -0.52 - µs trr -0.10 - µs LS tON VPN = 300V, VCC = VBS = 15V IC = 20A VIN = 0V ↔ 5V, Inductive Load (Note 3) -0.63 - µs tC(ON) -0.30 - µs tOFF -1.01 - µs tC(OFF) -0.51 - µs trr -0.10 - µs ICES Collector-Emitter Leakage Current VCE = VCES -- 250 µA V CE I C V IN t ON t C(ON) V IN(ON) 10% I C 10% V CE 90% I C 100% I C t rr 100% I C V CE I C V IN t OFF t C(OFF) V IN(OFF) 10% V CE 10% I C (a) turn-on (b) turn-off |
同様の部品番号 - FSBB20CH60F |
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同様の説明 - FSBB20CH60F |
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