データシートサーチシステム |
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BD241BFP データシート(PDF) 1 Page - STMicroelectronics |
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BD241BFP データシート(HTML) 1 Page - STMicroelectronics |
1 / 4 page BD241BFP BD242BFP COMPLEMENTARY SILICON POWER TRANSISTORS s SGS-THOMSON PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES s FULLY MOLDED ISOLATED PACKAGE s 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS s GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS DESCRIPTION The BD241BFP is silicon epitaxial-base NPN transistors mounted in TO-220FP fully molded isolated package. It is inteded for power linear and switching applications. The complementary PNP types is the BD242BFP. INTERNAL SCHEMATIC DIAGRAM April 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t NPN BD241BFP PNP BD242BFP VCER Collector-Base Voltage (RBE =100 Ω)90 V VCEO Collector-Emit ter Voltage (IB =0) 80 V VEBO Emitter-Base Voltage (IC =0) 5 V IC Collector Current 3 A ICM Collector Peak Current 5 A IB Base Current 1 A Ptot Tot al Dissipation at Tc ≤ 25 oC24 W Tstg Storage Temperature -65 to 150 oC Tj Max. O perat ing Junction Temperature 150 oC For PNP types voltage and current values are negative. 1 2 3 TO-220FP 1/4 |
同様の部品番号 - BD241BFP |
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同様の説明 - BD241BFP |
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