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BTA16-800B データシート(PDF) 1 Page - STMicroelectronics |
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BTA16-800B データシート(HTML) 1 Page - STMicroelectronics |
1 / 5 page BTA16 B BTB16 B March 1995 STANDARD TRIACS Symbol Parameter Value Unit IT(RMS) RMS on-state current (360 ° conduction angle) BTA Tc = 80 °C16 A BTB Tc = 90 °C ITSM Non repetitive surge peak on-state current ( Tj initial = 25 °C) tp = 8.3 ms 170 A tp = 10 ms 160 I2tI2t value tp = 10 ms 128 A2s dI/dt Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs Repetitive F = 50 Hz 10 A/ µs Non Repetitive 50 Tstg Tj Storage and operating junction temperature range - 40 to + 150 - 40 to + 125 °C °C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 260 °C TO220AB (Plastic) A1 A2 G . HIGH SURGE CURRENT CAPABILITY . COMMUTATION : (dV/dt)c > 10V/ µs . BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION Symbol Parameter BTA / BTB16-... B Unit 400 600 700 800 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 400 600 700 800 V ABSOLUTE RATINGS (limiting values) FEATURES The BTA/BTB16 B triac family are high perform- ance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where high surge current capability is re- quired. Application such as phase control and static switching on inductive or resistive load. 1/5 |
同様の部品番号 - BTA16-800B |
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同様の説明 - BTA16-800B |
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