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BTA201-800ER データシート(PDF) 7 Page - NXP Semiconductors |
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BTA201-800ER データシート(HTML) 7 Page - NXP Semiconductors |
7 / 12 page BTA201_SER_B_E_ER_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 4 February 2008 7 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 7. Dynamic characteristics Table 6. Dynamic characteristics Symbol Parameter Conditions BTA201-600B BTA201-800B BTA201-600E BTA201-800E BTA201-800ER Unit Min Typ Max Min Typ Max dVD/dt rate of rise of off-state voltage VDM =67% VDRM(max); Tj = 125 °C; exponential waveform; gate open circuit 1000 - - 600 - - V/ µs dIcom/dt rate of change of commutating current VDM = 400 V; Tj = 125 °C; dVcom/dt=20V/µs; gate open circuit 12 - - 2.5 - - A/ms VDM = 400 V; Tj = 125 °C; dVcom/dt=10V/µs; gate open circuit 16 - - 3.5 - - A/ms tgt gate-controlled turn-on time ITM =20A; VD =VDRM(max); IG = 0.1 A; dIG/dt=5A/µs -2 -- 2 - µs (1) T2 − G− (2) T2+ G − (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Tj (°C) −50 150 100 050 001aab101 0.8 1.2 1.6 0.4 VGT VGT(25°C) IGT IGT(25°C) Tj (°C) −50 0 150 100 50 1 2 3 0 003aaa959 (1) (2) (3) (1) (2) (3) |
同様の部品番号 - BTA201-800ER |
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同様の説明 - BTA201-800ER |
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