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BAP65-02 データシート(PDF) 3 Page - NXP Semiconductors |
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BAP65-02 データシート(HTML) 3 Page - NXP Semiconductors |
3 / 7 page NXP Semiconductors Product specification Silicon PIN diode BAP65-02 ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VF forward voltage IF = 50 mA 0.9 1.1 V IR reverse leakage current VR =20V − 20 nA Cd diode capacitance VR = 0 V; f = 1 MHz 0.65 − pF VR = 1 V; f = 1 MHz 0.55 0.9 pF VR = 3 V; f = 1 MHz 0.5 0.8 pF VR = 20 V; f = 1 MHz 0.375 − pF rD diode forward resistance IF = 1 mA; f = 100 MHz 1 −Ω IF = 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω IF = 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω IF = 100 mA; f = 100 MHz 0.35 −Ω |s 21| 2 isolation VR = 0; f = 900 MHz 10 − dB VR = 0; f = 1800 MHz 5.8 − dB VR = 0; f = 2450 MHz 4.4 − dB |s 21| 2 insertion loss IF = 1 mA; f = 900 MHz 0.11 − dB IF = 1 mA; f = 1800 MHz 0.13 − dB IF = 1 mA; f = 2450 MHz 0.16 − dB |s 21| 2 insertion loss IF = 5 mA; f = 900 MHz 0.08 − dB IF = 5 mA; f = 1800 MHz 0.11 − dB IF = 5 mA; f = 2450 MHz 0.13 − dB |s21|2 insertion loss IF = 10 mA; f = 900 MHz 0.07 − dB IF = 10 mA; f = 1800 MHz 0.1 − dB IF = 10 mA; f = 2450 MHz 0.13 − dB |s21|2 insertion loss IF = 100 mA; f = 900 MHz 0.07 − dB IF = 100 mA; f = 1800 MHz 0.1 − dB IF = 100 mA; f = 2450 MHz 0.128 − dB τL charge carrier life time when switched from IF =10mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA 0.17 −µs LS series inductance IF = 100 mA; f = 100 MHz 0.6 − nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 85 K/W Rev. 04 - 8 January 2008 3 of 7 |
同様の部品番号 - BAP65-02 |
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同様の説明 - BAP65-02 |
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