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LM2622 データシート(PDF) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
部品番号 LM2622
部品情報  600kHz/1.3MHz Step-up PWM DC/DC Converter
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メーカー  NSC [National Semiconductor (TI)]
ホームページ  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM2622 データシート(HTML) 4 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
IN
12V
SW Voltage
18V
FB Voltage
7V
V
C Voltage
7V
SHDN Voltage
7V
FSLCT
12V
Maximum Junction
Temperature
150˚C
Power Dissipation(Note 2)
Internally Limited
Lead Temperature
300˚C
Vapor Phase (60 sec.)
215˚C
Infrared (15 sec.)
220˚C
ESD Susceptibility
(Note 3)
Human Body Model
2kV
Machine Model
200V
Operating Conditions
Operating Junction
Temperature Range (Note 4)
−40˚C to +125˚C
Storage Temperature
−65˚C to +150˚C
Supply Voltage
2V to 12V
Electrical Characteristics
Specifications in standard type face are for T
J = 25˚C and those with boldface type apply over the full Operating Tempera-
ture Range (T
J = −40˚C to +125˚C)Unless otherwise specified. VIN =2.0V and IL = 0A, unless otherwise specified.
Symbol
Parameter
Conditions
Min
(Note 4)
Typ
(Note 5)
Max
(Note 4)
Units
I
Q
Quiescent Current
FB = 0V (Not Switching)
1.3
2.0
mA
V
SHDN =0V
5
10
µA
V
FB
Feedback Voltage
1.2285
1.26
1.2915
V
I
CL(Note 6)
Switch Current Limit
V
IN = 2.7V (Note 7)
1.0
1.65
2.3
A
∆V
O/
∆I
LOAD
Load Regulation
V
IN = 3.3V
6.7
mV/A
%V
FB/
∆V
IN
Feedback Voltage Line
Regulation
2.0V
≤ V
IN
≤ 12.0V
0.013
0.1
%/V
I
B
FB Pin Bias Current (Note 8)
0.5
20
nA
V
IN
Input Voltage Range
212
V
g
m
Error Amp Transconductance
∆I = 5µA
40
135
290
µmho
A
V
Error Amp Voltage Gain
135
V/V
D
MAX
Maximum Duty Cycle
78
85
%
f
S
Switching Frequency
FSLCT = Ground
480
600
720
kHz
FSLCT = V
IN
1
1.25
1.5
MHz
I
SHDN
Shutdown Pin Current
V
SHDN =VIN
0.01
0.1
µA
V
SHDN =0V
−0.5
-1
I
L
Switch Leakage Current
V
SW = 18V
0.01
3
µA
R
DSON
Switch R
DSON
V
IN = 2.7V, ISW = 1A
0.2
0.4
Th
SHDN
SHDN Threshold
Output High
0.9
0.6
V
Output Low
0.6
0.3
V
UVP
On Threshold
1.8
1.92
2.0
V
Off Threshold
1.7
1.82
1.9
V
θ
JA
Thermal Resistance
Junction to Ambient(Note 9)
235
˚C/W
Junction to Ambient(Note 10)
225
Junction to Ambient(Note 11)
220
Junction to Ambient(Note 12)
200
Junction to Ambient(Note 13)
195
Note 1: Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is intended to
be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Note 2: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, θJA,
and the ambient temperature, TA. See the Electrical Characteristics table for the thermal resistance of various layouts. The maximum allowable power dissipation
at any ambient temperature is calculated using: PD (MAX) = (TJ(MAX) −TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die
temperature, and the regulator will go into thermal shutdown.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5k
Ω resistor into each pin. The machine model is a 200pF capacitor discharged
directly into each pin.
www.national.com
4


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