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データシートサーチシステム |
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データシートサーチシステム |
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KSE800 データシート(PDF) 1 Page - Fairchild Semiconductor |
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KSE800 データシート(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2001 Fairchild Semiconductor Corporation Rev. A3, June 2001 NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector- Base Voltage : KSE800/801 : KSE802/803 60 80 V V VCEO Collector-Emitter Voltage : KSE800/801 : KSE802/803 60 80 V V VEBO Emitter-Base Voltage 5 V IC Collector Current 4 A IB Base Current 0.1 A PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units BVCEO Collector-Emitter Breakdown Voltage : KSE800/801 : KSE802/803 IC = 50mA, IB = 0 60 80 V V ICEO Collector Cut-off Current : KSE800/801 : KSE802/803 VCE = 60V, IB = 0 VCE = 80V, IB = 0 100 100 µA µA ICBO Collector Cut-off Current VCB = Rated BVCEO, IE = 0 VCB = Rated BVCEO, IE = 0 TC = 100°C 100 500 µA µA IEBO Emitter Cut-off Current VBE = 5V, IC = 0 2 mA hFE DC Current Gain : KSE800/802 : KSE801/803 : ALL DEVICES VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 750 750 100 VCE(sat) Collector-Emitter Saturation Voltage : KSE800/802 : KSE801/803 : ALL DEVICES IC = 1.5A, IB = 30mA IC = 2A, IB = 40mA IC = 4A, IB = 40mA 2.5 2.8 3 V V V VBE(on) Base-Emitter ON Voltage : KSE800/802 : KSE801/803 : ALL DEVICES VCE = 3V, IC = 1.5A VCE = 3V, IC = 2A VCE = 3V, IC = 4A 2.5 2.5 3 V V V KSE800/801/802/803 Monolithic Construction With Built-in Base- Emitter Resistors • High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC • Complement to KSE700/701/702/703 R110k Ω ≅ R20.6k Ω ≅ Equivalent Circuit B E C R1 R2 1 TO-126 1. Emitter 2.Collector 3.Base |
同様の部品番号 - KSE800 |
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同様の説明 - KSE800 |
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