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S9018 データシート(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

部品番号 S9018
部品情報  Silicon Epitaxial Planar Transistor
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メーカー  BILIN [Galaxy Semi-Conductor Holdings Limited]
ホームページ  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

S9018 データシート(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S9018
Document number: BL/SSSTC085
www.galaxycn.com
Rev.A
1
FEATURES
High current gain bandwidth product.
power dissipation.(PC=200mW)
APPLICATIONS
NPN epitaxial silicon transistor.
ORDERING INFORMATION
SOT-23
Type No.
Marking
Package Code
S9018
J8
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
25
V
VCEO
Collector-Emitter Voltage
18
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
50
mA
PC
Collector Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
25
V
Collector-emitter breakdown voltage V(BR)CEO
IC=0.1mA,IB=0
18
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=20V,IE=0
0.1
μA
Collector cut-off current
ICEO
VCE=15V,IB=0
0.1
μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
0.1
μA
DC current gain
hFE
VCE=5V,IC=1mA
70
190
Collector-emitter saturation voltage
VCE(sat)
IC=10 mA, IB= 1mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=10 mA, IB= 1mA
1.4
V
Transition frequency
fT
VCE=5V, IC= 5mA
f=400MHz
600
MHz
Pb
Lead-free


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