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M27V256-100K6TR データシート(PDF) 5 Page - STMicroelectronics |
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M27V256-100K6TR データシート(HTML) 5 Page - STMicroelectronics |
5 / 15 page 5/15 M27V256 Table 7. Read Mode DC Characteristics (1) (TA = 0 to 70 °C or –40 to 85°C; VCC = 3.3V ± 10%; VPP =VCC) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Maximum DC voltage on Output is VCC +0.5V. Table 8A. Read Mode AC Characteristics (1) (TA = 0 to 70 °C or –40 to 85°;VCC = 3.3V ± 10%; VPP =VCC) Note: 1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. 2. Sampled only, not 100% tested. 3. Speed obtained with High Speed AC measurement conditions. Symbol Parameter Test Condition Min Max Unit ILI Input Leakage Current 0V ≤ VIN ≤ VCC ±10 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC ±10 µA ICC Supply Current E=VIL,G= VIL,IOUT = 0mA, f = 5MHz, VCC ≤ 3.6V 10 mA ICC1 Supply Current (Standby) TTL E= VIH 1mA ICC2 Supply Current (Standby) CMOS E> VCC –0.2V, VCC ≤ 3.6V 10 µA IPP Program Current VPP =VCC 10 µA VIL Input Low Voltage –0.3 0.8 V VIH (2) Input High Voltage 2 VCC +1 V VOL Output Low Voltage IOL = 2.1mA 0.4 V VOH Output High Voltage TTL IOH = –400µA 2.4 V Output High Voltage CMOS IOH = –100µA Vcc – 0.7V V Symbol Alt Parameter Test Condition M27V256 Unit -90 (3) -100 Min Max Min Max tAVQV tACC Address Valid to Output Valid E = VIL,G= VIL 90 100 ns tELQV tCE Chip Enable Low to Output Valid G= VIL 90 100 ns tGLQV tOE Output Enable Low to Output Valid E=VIL 40 45 ns tEHQZ (2) tDF Chip Enable High to Output Hi-Z G = VIL 025030 ns tGHQZ (2) tDF Output Enable High to Output Hi-Z E=VIL 025030 ns tAXQX tOH Address Transition to Output Transition E=VIL,G= VIL 00 ns The associated transient voltage peaks can be suppressed by complying with the two line output control and by properly selected decoupling ca- pacitors. It is recommended that a 0.1 µF ceramic capacitor be used on every device between VCC and VSS. This should be a high frequency capaci- tor of low inherent inductance and should be placed as close to the device as possible. In addi- tion, a 4.7 µF bulk electrolytic capacitor should be used between VCC and VSS for every eight devic- es. The bulk capacitor should be located near the power supply connection point. The purpose of the bulk capacitor is to overcome the voltage drop caused by the inductive effects of PCB traces. |
同様の部品番号 - M27V256-100K6TR |
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同様の説明 - M27V256-100K6TR |
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