SI1012R_05 datasheet(2/6 Pages) VISHAY

部品番号	SI1012R

部品情報	N-Channel 1.8-V (G-S) MOSFET

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Si1012R/X

Vishay Siliconix

www.vishay.com

2

Document Number: 71166

S-50366—Rev. B, 28-Feb-05

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

0.45

0.9

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "4.5 V

"0.5

"1.0

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

0.3

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V, TJ = 85_C

5

mA

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

700

mA

VGS = 4.5 V, ID = 600 mA

0.41

0.70

Drain-Source On-State Resistancea

rDS(on)

VGS = 2.5 V, ID = 500 m A

0.53

0.85

W

DS(on)

VGS = 1.8 V, ID = 350 m A

0.70

1.25

Forward Transconductancea

gfs

VDS = 10 V, ID = 400 mA

1.0

S

Diode Forward Voltagea

VSD

IS = 150 mA, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

750

Gate-Source Charge

Qgs

VDS = 10 V, VGS = 4.5 V, ID = 250 mA

75

pC

Gate-Drain Charge

Qgd

225

Turn-On Delay Time

td(on)

5

Rise Time

tr

VDD = 10 V, RL = 47 W

5

ns

Turn-Off Delay Time

td(off)

VDD = 10 V, RL = 47 W

ID ^ 200 mA, VGEN = 4.5 V, RG = 10 W

25

ns

Fall Time

tf

11

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

同様の部品番号 - SI1012R_05

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI1012R	108Kb / 6P	N-Channel 1.8-V (G-S) MOSFET Rev. C, 07-Jul-08

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同様の説明 - SI1012R_05

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