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SI4908DY データシート(PDF) 2 Page - Vishay Siliconix |
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SI4908DY データシート(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page  Si4908DY Vishay Siliconix New Product www.vishay.com 2 Document Number: 73698 S–60218—Rev. A, 20-Feb-06 SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 mA 40 VDS Temperature Coefficient DVDS/TJ ID = 250 mA 40 V VGS(th) Temperature Coefficient DVGS(th)/TJ ID = 250 mA –4.6 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA 0.8 2.2 Gate-Body Leakage IGSS VDS = 0 V, VGS = "16 V 100 nA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 mA Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V, TJ = 55 _C 10 mA On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V 20 A Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 4.1 A 0.048 0.060 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 3.8 A 0.056 0.070 W Forward Transconductanceb gfs VDS = 15 V, ID = 4.1 A 15 S Dynamica Input Capacitance Ciss 355 Output Capacitance Coss N-Channel VDS = 20 V, VGS = 0 V, f = 1 MHz 50 pF Reverse Transfer Capacitance Crss VDS = 20 V, VGS = 0 V, f = 1 MHz 29 Total Gate Charge Q VDS = 20 V, VGS = 10 V, ID = 5 A 8 12 Total Gate Charge Qg NCh l 3.7 6 nC Gate-Source Charge Qgs N-Channel VDS = 20 V, VGS = 4.5 V, ID = 5 A 1.1 nC Gate-Drain Charge Qgd VDS = 20 V, VGS = 4.5 V, ID = 5 A 1.4 Gate Resistance Rg f = 1 MHz 3.4 5.2 W Turn-On Delay Time td(on) 8 13 Rise Time tr N-Channel VDD =20V RL =4 W 20 30 Turn-Off Delay Time td(off) VDD = 20 V, RL = 4 W ID ^ 1 A, VGEN = 10 V, Rg = 1 W 23 35 Fall Time tf ID ^ 1 A, VGEN 10 V, Rg 1 W 27 42 ns Turn-On Delay Time td(on) 74 110 ns Rise Time tr N-Channel VDD =20V RL =4 W 95 145 Turn-Off Delay Time td(off) VDD = 20 V, RL = 4 W ID ^ 1 A, VGEN = 4.5 V, Rg = 1 W 31 48 Fall Time tf ID ^ 1 A, VGEN 4.5 V, Rg 1 W 33 50 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 _C 2.3 A Pulse Diode Forward Currenta ISM 20 A Body Diode Voltage VSD IS = 1.5 A 0.8 1.2 V Body Diode Reverse Recovery Time trr 26 40 ns Body Diode Reverse Recovery Charge Qrr N-Channel 26 40 nC Reverse Recovery Fall Time ta N-Channel IF = 2 A, di/dt = 100 A/ms, TJ = 25 _C 13 ns Reverse Recovery Rise Time tb 13 ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. |
同様の部品番号 - SI4908DY |
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同様の説明 - SI4908DY |
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