データシートサーチシステム |
|
DS18B20 データシート(PDF) 20 Page - Dallas Semiconductor |
|
DS18B20 データシート(HTML) 20 Page - Dallas Semiconductor |
20 / 22 page DS18B20 20 of 22 AC ELECTRICAL CHARACTERISTICS—NV MEMORY (-55°C to +100°C; VDD = 3.0V to 5.5V) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS NV Write Cycle Time tWR 2 10 ms EEPROM Writes NEEWR -55°C to +55°C 50k writes EEPROM Data Retention tEEDR -55°C to +55°C 10 years AC ELECTRICAL CHARACTERISTICS (-55°C to +125°C; VDD = 3.0V to 5.5V) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS NOTES 9-bit resolution 93.75 10-bit resolution 187.5 11-bit resolution 375 Temperature Conversion Time tCONV 12-bit resolution 750 ms 1 Time to Strong Pullup On tSPON Start Convert T Command Issued 10 μs Time Slot tSLOT 60 120 μs 1 Recovery Time tREC 1 μs 1 Write 0 Low Time tLOW0 60 120 μs 1 Write 1 Low Time tLOW1 1 15 μs 1 Read Data Valid tRDV 15 μs 1 Reset Time High tRSTH 480 μs 1 Reset Time Low tRSTL 480 μs 1,2 Presence-Detect High tPDHIGH 15 60 μs 1 Presence-Detect Low tPDLOW 60 240 μs 1 Capacitance CIN/OUT 25 pF NOTES: 1) See the timing diagrams in Figure 18. 2) Under parasite power, if tRSTL > 960μs, a power-on reset may occur. Figure 17. Typical Performance Curve DS18B20 Typical Error Curve -0.5 -0.4 -0.3 -0.2 -0.1 0 0.1 0.2 0.3 0.4 0.5 0 10203040506070 Temperature (°C) Mean Error +3s Error -3s Error |
同様の部品番号 - DS18B20 |
|
同様の説明 - DS18B20 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |