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データシートサーチシステム |
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データシートサーチシステム |
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SPB20N60S5 データシート(PDF) 1 Page - Infineon Technologies AG |
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SPB20N60S5 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 2001-07-25 SPP20N60S5 SPB20N60S5 Preliminary data Cool MOS™ ====Power Transistor •=New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge •=Improved periodic avalanche rating • Extreme dv/dt rated •=Optimized capacitances •=Improved noise immunity •=Former development designation: SPPx1N60S5/SPBx1N60S5 C Power Semiconductors O O LMOS Product Summary VDS @ Tjmax 650 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 G,1 D,2 S,3 Marking 20N60S5 20N60S5 Type Package Ordering Code SPP20N60S5 P-TO220-3-1 Q67040-S4751 SPB20N60S5 P-TO263-3-2 Q67040-S4171 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TC=25°C TC=100°C ID 20 13 A Pulsed drain current 1) TC=25°C ID puls 40 Avalanche energy, single pulse ID = 10 A, VDD = 50 V EAS 690 mJ Avalanche energy (repetitive, limited by Tjmax) ID = 20 A, VDD = 50 V EAR 1 Avalanche current (repetitive, limited by Tjmax) IAR 20 A Reverse diode dv/dt IS=20A, VDS<VDSS, di/dt=100A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TC=25°C Ptot 208 W Operating and storage temperature Tj , Tstg -55... +150 °C |
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