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STPR806D データシート(Datasheet) 1 Page - Sirectifier Semiconductors

部品番号. STPR806D
部品情報  Ultra Fast Recovery Diodes
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メーカー  SIRECTIFIER [Sirectifier Semiconductors]
ホームページ  http://www.sirectifier.com
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STPR806D
FEATURES
* Power factor correction function
* Glass passivated chip
* Superfast switching time for high efficiency
* Low forward voltage drop and high current capability
* Low reverse leakage current
* High surge capacity
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 0.08 ounces, 2.24 grams
* Mounting position: Any
Symbol
Characteristics
I(AV)
Maximum Average Forward Rectified Current
@TC=100 C
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
VF(MAX)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
@TJ=25 C
@TJ=125 C
CJ
Typical Thermal Resistance (Note 3)
TRR
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 1)
TJ, TSTG
Operating And Storage Temperature Range
Maximum Ratings
8.0
100
5
200
60
25
2.5
-55 to +150
A
A
V
Unit
uA
pF
ns
o
o
o
ROJC
C/W
o
C
o
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A.
3. Thermal Resistance Junction To Case.
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
Milimeter
Min.
Max.
12.70
14.73
14.23
16.51
9.66
10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
-
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Inches
Min.
Max.
0.500
0.580
0.560
0.650
0.380
0.420
0.139
0.161
2.300
0.420
0.100
0.135
0.045
0.070
-
0.250
0.025
0.035
0.190
0.210
0.140
0.190
0.015
0.022
0.080
0.115
0.025
0.055
Dimensions TO-220AC
Maximum Forward Voltage
At 8.0A DC
@TJ=25 C
@TJ=125 C
1.75
1.4
o
o
STPR806D
VRRM
V
600
VRMS
V
420
VDC
V
600
A=Anode, C=Cathode, TAB=Cathode
C
A
C(TAB)
C
A
Ultra Fast Recovery Diodes




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