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STB75NF20 データシート(PDF) 5 Page - STMicroelectronics |
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STB75NF20 データシート(HTML) 5 Page - STMicroelectronics |
5 / 16 page STB75NF20 - STP75NF20 - STW75NF20 Electrical characteristics 5/16 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse with limited by maximum temperature Source-drain current Source-drain current (pulsed) 75 300 A A VSD (2) 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 75A, VGS = 0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 75A,VDD = 100V di/dt = 100 A/µs Tj = 25°C (see Figure 20) 222 2.18 19 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 75A, VDD = 100V di/dt = 100 A/µs Tj = 150°C (see Figure 20) 267 3 22 ns µC A |
同様の部品番号 - STB75NF20 |
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同様の説明 - STB75NF20 |
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