SD1285 datasheet(1/3 Pages) STMICROELECTRONICS

部品番号	SD1285

部品情報	RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

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HF SSB APPLICATIONS

RF & MICROWAVE TRANSISTORS

.380 4LFL (M113)

epoxy sealed

.

30 MHz

.

12.5 VOLTS

.

COMMON EMITTER

.

GOLD METALLIZATION

.

IMD

− 30 dB

.

POUT

= 20 W MIN. WITH 15 dB GAIN

DESCRIPTION

The SD1285 is a 12.5 V epitaxial NPN planar

transistor designed primarily for SSB communica-

tions. This device utilizes emitter ballasting to

achieve extreme ruggedness under severe oper-

ating conditions.

PIN CONNECTION

BRANDING

SD1285

ORDER CODE

SD1285

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

36

V

VCEO

Collector-Emitter Voltage

18

V

VEBO

Emitter-Base Voltage

4.0

V

IC

Device Current

4.5

A

PDISS

Power Dissipation

80

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

− 65 to +150

°C

RTH(j-c)

Junction-Case Thermal Resistance

2.2

°C/W

SD1285

1. Collector

3. Base

2. Emitter

4. Emitter

THERMAL DATA

October 1992

1/3

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