データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

KM416S1120DT-GF8 データシート(PDF) 5 Page - Samsung semiconductor

部品番号 KM416S1120DT-GF8
部品情報  512K x 16bit x 2 Banks Synchronous DRAM LVTTL
Download  43 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  SAMSUNG [Samsung semiconductor]
ホームページ  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM416S1120DT-GF8 データシート(HTML) 5 Page - Samsung semiconductor

  KM416S1120DT-GF8 Datasheet HTML 1Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 2Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 3Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 4Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 5Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 6Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 7Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 8Page - Samsung semiconductor KM416S1120DT-GF8 Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 5 / 43 page
background image
KM416S1120D
CMOS SDRAM
- 5 -
Rev. 1.4 (Jun. 1999)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD supply relative to Vss
VDD, VDDQ
-1.0 ~ 4.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1
W
Short circuit current
IOS
50
mA
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD, VDDQ
3.0
3.3
3.6
V
4
Input logic high votlage
VIH
2.0
3.0
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.8
V
2
Output logic high voltage
VOH
2.4
-
-
V
IOH = -2mA
Output logic low voltage
VOL
-
-
0.4
V
IOL = 2mA
Input leakage current
ILI
-10
-
10
uA
3
Note :
CAPACITANCE (VDD = 3.3V, TA = 23
°C, f = 1MHz, VREF =1.4V ± 200 mV)
Pin
Symbol
Min
Max
Unit
Clock
CCLK
2
4
pF
RAS, CAS, WE, CS, CKE, L(U)DQM
CIN
2
4
pF
Address
CADD
2
4
pF
DQ0 ~ DQ15
COUT
3
5
pF
1. VIH (max) = 5.6V AC. The overshoot voltage duration is
≤ 3ns.
2. VIL (min) = -2.0V AC. The undershoot voltage duration is
≤ 3ns.
3. Any input 0V
≤ VIN ≤ VDDQ.
Input leakage currents include HI-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. The VDD condition of KM416S1120D-C/6 is 3.135V~3.6V.
:
DECOUPLING CAPACITANCE GUIDE LINE
Recommended decoupling capacitance added to power line at board.
Parameter
Symbol
Value
Unit
Decoupling Capacitance between VDD and VSS
CDC1
0.1 + 0.01
uF
Decoupling Capacitance between VDDQ and VSSQ
CDC2
0.1 + 0.01
uF
1. VDD and VDDQ pins are separated each other.
All VDD pins are connected in chip. All VDDQ pins are connected in chip.
2. VSS and VSSQ pins are separated each other
All VSS pins are connected in chip. All VSSQ pins are connected in chip.
Note :


同様の部品番号 - KM416S1120DT-GF8

メーカー部品番号データシート部品情報
logo
List of Unclassifed Man...
KM416S1120DT-G/F10 ETC-KM416S1120DT-G/F10 Datasheet
1Mb / 43P
   512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F6 ETC-KM416S1120DT-G/F6 Datasheet
1Mb / 43P
   512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F7 ETC-KM416S1120DT-G/F7 Datasheet
1Mb / 43P
   512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/F8 ETC-KM416S1120DT-G/F8 Datasheet
1Mb / 43P
   512K x 16bit x 2 Banks Synchronous DRAM LVTTL
KM416S1120DT-G/FC ETC-KM416S1120DT-G/FC Datasheet
1Mb / 43P
   512K x 16bit x 2 Banks Synchronous DRAM LVTTL
More results

同様の説明 - KM416S1120DT-GF8

メーカー部品番号データシート部品情報
logo
List of Unclassifed Man...
KM416S1120D ETC-KM416S1120D Datasheet
1Mb / 43P
   512K x 16bit x 2 Banks Synchronous DRAM LVTTL
logo
Samsung semiconductor
K4S161622D SAMSUNG-K4S161622D Datasheet
1Mb / 41P
   512K x 16Bit x 2 Banks Synchronous DRAM
KM416S1021C SAMSUNG-KM416S1021C Datasheet
78Kb / 8P
   512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface
K4S281632B SAMSUNG-K4S281632B Datasheet
108Kb / 10P
   128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632M SAMSUNG-K4S281632M Datasheet
87Kb / 10P
   128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
KM416S8030B SAMSUNG-KM416S8030B Datasheet
133Kb / 11P
   128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S561632A SAMSUNG-K4S561632A Datasheet
127Kb / 10P
   256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C SAMSUNG-K4S281632C Datasheet
47Kb / 9P
   128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632D SAMSUNG-K4S281632D Datasheet
112Kb / 11P
   128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S561632D-TC75000 SAMSUNG-K4S561632D-TC75000 Datasheet
64Kb / 11P
   256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com