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STF17NF25 データシート(PDF) 5 Page - STMicroelectronics |
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STF17NF25 データシート(HTML) 5 Page - STMicroelectronics |
5 / 17 page STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25 Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=125V, ID=8.5A, RG=4.7Ω, VGS=10V (see Figure 15) 8.8 17.2 ns ns td(off) tf Turn-off delay time Fall time VDD=125V, ID=8.5A, RG=4.7Ω, VGS=10V (see Figure 15) 21 8.8 ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 17 68 A A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=17A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17A, di/dt = 100A/µs, VDD = 50 V, Tj = 25°C (see Figure 17) 157 0.91 11.6 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 17A, di/dt = 100A/µs, VDD = 50 V, Tj=150°C (see Figure 17) 196 1.34 13.7 ns µC A |
同様の部品番号 - STF17NF25 |
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同様の説明 - STF17NF25 |
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