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SD2931-10 データシート(PDF) 1 Page - STMicroelectronics |
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SD2931-10 データシート(HTML) 1 Page - STMicroelectronics |
1 / 16 page March 2008 Rev 6 1/16 16 SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features ■ Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures Description The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz. The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. Figure 1. Pin connection M174 Epoxy sealed 1 3 4 2 1. Drain 2. Source 3. Gate 4. Source www.st.com Table 1. Device summary Order code Marking Package Packaging SD2931-10 SD2931-10 M174 Plastic tray |
同様の部品番号 - SD2931-10 |
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同様の説明 - SD2931-10 |
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