LMH6560MT datasheet(2/23 Pages) NSC

部品番号	LMH6560MT

部品情報	Quad, High-Speed, Closed-Loop Buffer

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

ESD Tolerance

Human Body Model

2000V (Note 2)

Machine Model

200V (Note 3)

Output Short Circuit Duration

(Note 4),(Note 5)

Supply Voltage (V

+ –V−)

13V

Voltage at Input/Output Pins

V

+ +0.8V, V− −0.8V

Soldering Information

Infrared or Convection (20 sec.)

235˚C

Wave Soldering (10 sec.)

260˚C

Storage Temperature Range

−65˚C to +150˚C

Junction Temperature (Note 6)

+150˚C

Operating Ratings (Note 1)

Supply Voltage (V

+ –V−)

3-10V

Operating Temperature Range

(Note 6), (Note 7)

−40˚C to +85˚C

Package Thermal Resistance (

θ

JA) (Note 6), (Note 7)

14-Pin SOIC

137˚C/W

14-Pin TSSOP

160˚C/W

±5V Electrical Characteristics

Unless otherwise specified, all limits guaranteed for T

J = 25˚C, V

+ = +5V, V− = −5V, V

O =VCM = 0V and RL = 100

Ω to 0V.

Boldface limits apply at the temperature extremes.

Symbol

Parameter

Conditions

Min

(Note 9)

Typ

(Note 8)

Max

(Note 9)

Units

Frequency Domain Response

SSBW

Small Signal Bandwidth

V

O < 0.5VPP

680

MHz

GFN

Gain Flatness < 0.1dB

V

O < 0.5VPP

375

MHz

FPBW

Full Power Bandwidth (−3dB)

V

O =2VPP (+10dBm)

280

MHZ

DG

Differential Gain

R

L = 150

Ω to 0V;

f = 3.58MHz

0.10

%

DP

Differential Phase

R

L = 150

Ω to 0V;

f = 3.58MHz

0.03

deg

Time Domain Response

t

r

Rise Time

3.3V Step (20-80%)

0.6

ns

t

f

Fall Time

0.7

ns

t

s

Settling Time to 0.1%

3.3V Step

9

ns

OS

Overshoot

1V Step

4

%

SR

Slew Rate

(Note 11)

3100

V/µs

Distortion And Noise Performance

HD2

2

nd Harmonic Distortion

V

O =2VPP; f = 20MHz

−58

dBc

HD3

3

rd Harmonic Distortion

V

O =2VPP; f = 20MHz

−52

dBc

THD

Total Harmonic Distortion

V

O =2VPP; f = 20MHz

−51

dBc

e

n

Input-Referred Voltage Noise

f = 1MHz

3

nV/

CP

1dB Compression Point

f = 10MHz

+23

dBm

CT

Amplifier Crosstalk

Receiving Amplifier:

R

S =50

Ω to 0V; f = 10MHz

−55

dB

SNR

Signal to Noise Ratio

f = 5MHz; V

O =1VPP

120

dB

AGM

Amplifier Gain Matching

R

L =2k

Ω to 0V; f = 5MHz;

V

O =1VPP

0.05

dB

Static, DC Performance

A

CL

Small Signal Voltage Gain

V

O = 100mVPP

R

L = 100

Ω to 0V

0.97

0.995

V/V

V

O = 100mVPP

R

L =2k

Ω to 0V

0.99

0.998

V

OS

Input Offset Voltage

2

20

25

mV

TC V

OS

Temperature Coefficient Input

Offset Voltage

(Note 12)

28

µV/˚C

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