STD12N10L datasheet(1/6 Pages) STMICROELECTRONICS

部品番号	STD12N10L

部品情報	N - CHANNEL 100V - 0.12 ohm - 12A TO-252 LOW THRESHOLD POWER MOS TRANSISTOR

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STD12N10L

N - CHANNEL 100V - 0.12

Ω - 12A TO-252

LOW THRESHOLD POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 0.12

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

s

LOW THRESHOLD DRIVE

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BG, LAMPDRIVERS, Etc.)

®

INTERNAL SCHEMATIC DIAGRAM

November 1999

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Volt age (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

Gat e-source Voltage

± 15

V

ID

Drain Current (continuous) at Tc =25

oC12

A

ID

Drain Current (continuous) at Tc =100

oC8

A

IDM(

•)

Drain Current (pulsed)

48

A

Ptot

Tot al Dissipation at Tc =25

oC50

W

Derating F act or

0.33

W /

oC

Tstg

Storage T emperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(o n)

ID

STD12N10L

100 V

< 0.15

Ω

12 A

1

3

DPAK

TO-252

(Suffix ”T4”)

1/9

同様の部品番号 - STD12N10L

メーカー	部品番号	データシート	部品情報
VBsemi Electronics Co.,...	STD12N10L	1,010Kb / 7P	N-Channel 100 V (D-S) MOSFET

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