データシートサーチシステム |
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STD16NE10L データシート(PDF) 3 Page - STMicroelectronics |
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STD16NE10L データシート(HTML) 3 Page - STMicroelectronics |
3 / 6 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Delay T ime Rise Time VDD =50 V ID =8 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 40 80 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =80 V ID =16 A VGS =5 V 24 5.5 11 32 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(off) tf Turn-off Delay T ime Fall T ime VDD =50 V ID =8 A RG =4.7 Ω VGS =4.5 V (Resistive Load, see fig. 3) 45 12 ns ns tr(Voff) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time VDD =80 V I D =16 A RG =4.7 Ω VGS =4.5 V (Induct ive Load, see fig. 5) 12 17 35 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 16 64 A A VSD ( ∗)Forward On Voltage ISD =16 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 16 A di/dt = 100 A/ µs VDD =40 V Tj =150 oC (see t est circuit, f ig. 5) 100 300 6 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area STD16NE10L 3/6 |
同様の部品番号 - STD16NE10L |
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同様の説明 - STD16NE10L |
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