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STD60NF06 データシート(PDF) 2 Page - STMicroelectronics |
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STD60NF06 データシート(HTML) 2 Page - STMicroelectronics |
2 / 9 page STD60NF06 2/9 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Tl Maximum Lead Temperature For Soldering Purpose 275 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 30 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 30 V) 350 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 60 V IDSS Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 10 µA IGSS Gate-body Leakage Current (VDS = 0) VGS = ± 20V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 24 V RDS(on) Static Drain-source On Resistance VGS = 10 V, ID = 30 A 0.014 0.016 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =15 V , ID = 30 A 20 S Ciss Input Capacitance VDS = 25 V, f = 1 MHz, VGS = 0 1810 pF Coss Output Capacitance 360 pF Crss Reverse Transfer Capacitance 125 pF |
同様の部品番号 - STD60NF06 |
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同様の説明 - STD60NF06 |
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