STD7NB20-1 datasheet(1/10 Pages) STMICROELECTRONICS

部品番号	STD7NB20-1

部品情報	N-CHANNEL 200V - 0.3ohm - 7A DPAK/IPAK PowerMESH??MOSFET

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July 2002

STD7NB20

STD7NB20-1

N-CHANNEL 200V - 0.3

Ω - 7A DPAK/IPAK

PowerMESH™ MOSFET

s

TYPICAL RDS(on) = 0.3 Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

s

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STD7NB20

STD7NB20-1

200 V

< 0.40

Ω

< 0.40

Ω

7 A

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

200

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

200

V

VGS

Gate- source Voltage

± 30

V

ID

Drain Current (continuos) at TC = 25°C

7A

ID

Drain Current (continuos) at TC = 100°C

5A

IDM (l)

Drain Current (pulsed)

28

A

PTOT

Total Dissipation at TC = 25°C

55

W

Derating Factor

0.44

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

5.5

V/ns

Tstg

Storage Temperature

– 65 to 150

°C

Tj

Max. Operating Junction Temperature

150

°C

(1) ISD≤ 7A, di/dt≤200 A/µs, VDD≤ V(BR)DSS, Tj≤TjMAX

INTERNAL SCHEMATIC DIAGRAM

1

3

TO-252

DPAK

3

2

1

IPAK

TO-251

同様の部品番号 - STD7NB20-1

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	STD7N60M2	1Mb / 21P	Extremely low gate charge June 2013 Rev 1
	STD7N60M6	384Kb / 15P	N-channel 600 V, 780 mΩ typ., 5 A, MDmesh M6 Power MOSFET in a DPAK package Rev 2 - July 2020

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同様の説明 - STD7NB20-1

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STD7NS20	319Kb / 8P	N-CHANNEL 200V - 0.35ohm - 7A DPAK / IPAK MESH OVERLAY??MOSFET
	STGD7NB60H-1	86Kb / 8P	N-CHANNEL 7A - 600V IPAK PowerMESH IGBT
	STGD7NB120S-1_0008	116Kb / 6P	N-CHANNEL 7A - 1200V - IPAK PowerMESH IGBT
	STGD7NB60H	327Kb / 9P	N-CHANNEL 7A - 600V - DPAK PowerMESH??IGBT
	STD2NB50	451Kb / 10P	N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh??MOSFET
	STD2NB40	66Kb / 6P	N - CHANNEL 400V - 3.5ohm - 2A - IPAK/DPAK PowerMESH MOSFET
	STD4NB40	449Kb / 10P	N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH??MOSFET
	STB11NB40-1	245Kb / 11P	N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
	STD1NB80	66Kb / 6P	N - CHANNEL 800V - 16ohm - 1A - DPAK/IPAK PowerMESH MOSFET May 1999
	STD3NB50	75Kb / 6P	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET

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