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STK13003 データシート(PDF) 1 Page - STMicroelectronics |
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STK13003 データシート(HTML) 1 Page - STMicroelectronics |
1 / 7 page STK13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s STK13003 IS REVERSE PINS OUT Vs STANDARD SOT-82 PACKAGE s MEDIUM VOLTAGE CAPABILITY s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED APPLICATIONS: s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. ® INTERNAL SCHEMATIC DIAGRAM September 2001 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0, IB = 0.75 A, tp < 10 µs, Tj < 150oC) BVEBO V IC Collector Current 1.5 A ICM Collector Peak Current (tp < 5 ms) 3 A IB Base Current 0.75 A IBM Base Peak Current (tp < 5 ms) 1.5 A Ptot Total Dissipation at Tc = 25 oC40 W Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC SOT-82 1/7 |
同様の部品番号 - STK13003 |
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同様の説明 - STK13003 |
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