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STK22N05 データシート(PDF) 1 Page - STMicroelectronics |
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STK22N05 データシート(HTML) 1 Page - STMicroelectronics |
1 / 10 page STK22N05 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR s TYPICAL RDS(on) = 0.048 Ω s AVALANCHE RUGGEDNESS TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW GATE CHARGE s HIGH CURRENT CAPABILITY s 175 oC OPERATING TEMPERATURE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS R DS(on) ID STK22N05 50 V < 0.065 Ω 22 A 1 2 3 SOT-82 SOT-194 (option) December 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Voltage (VGS =0) 50 V VDG R Drain- gate Voltage (RGS =20 k Ω)50 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at T c =25 oC22 A ID Drain Current (cont inuous) at T c =100 oC15 A IDM( •) Drain Current (pulsed) 88 A Ptot Total Dissipation at Tc =25 oC65 W Derating Factor 0. 43 W/ oC Tstg St orage Temperat ure -65 to 175 oC Tj Max. Operat ing Junction Temperature 175 oC ( •) Pulse width limited by safe operating area 1 2 3 1/10 |
同様の部品番号 - STK22N05 |
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同様の説明 - STK22N05 |
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