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STB13NK60Z データシート(PDF) 3 Page - STMicroelectronics |
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STB13NK60Z データシート(HTML) 3 Page - STMicroelectronics |
3 / 14 page 3/14 STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF DYNAMIC SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. 3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID =1mA, VGS = 0 600 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating VDS = Max Rating, TC = 125 °C 1 50 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 20 V ±10 µA VGS(th) Gate Threshold Voltage VDS =VGS,ID = 100 µA 3 3.75 4.5 V RDS(on) Static Drain-source On Resistance VGS =10 V,ID = 5 A 0.48 0.55 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS =8 V, ID =5 A 11 S Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS =25V,f= 1MHz, VGS = 0 2030 210 48 pF pF pF Coss eq. (3) Equivalent Output Capacitance VGS =0V, VDS = 0V to 480 V 125 pF Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD =300 V, ID =5 A RG = 4.7Ω VGS =10 V (Resistive Load see, Figure 3) 22 14 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =480 V, ID =10 A, VGS =10 V 66 11 33 92 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 300 V, ID =5 A RG =4.7Ω VGS =10 V (Resistive Load see, Figure 3) 61 12 ns ns tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = 480V, ID =10A, RG =4.7Ω, VGS = 10V (Inductive Load see, Figure 5) 10 9 20 ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (2) Source-drain Current Source-drain Current (pulsed) 10 40 A A VSD (1) Forward On Voltage ISD =10A,VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 10 A, di/dt = 100 A/µs VDD =35 V,Tj = 150°C (see test circuit, Figure 5) 570 4.5 16 ns µC A |
同様の部品番号 - STB13NK60Z |
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同様の説明 - STB13NK60Z |
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