STP22NE03 datasheet(2/5 Pages) STMICROELECTRONICS

部品番号	STP22NE03

部品情報	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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THERMAL DATA

Rthj-case

Rthj-amb

Rthc-sink

Tl

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

2.5

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ < 1%)

22

A

EAS

Single Pulse Avalanche Energy

(starting Tj = 25

oC, ID = IAR, VDD = 15 V)

TBD

mJ

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250

µA

VGS = 0

30

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

Tc =125

oC

1

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS =

± 15 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold

Voltage

VDS = VGS

ID = 250

µA

1

1.7

2.5

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V

ID = 11 A

VGS = 5V

ID = 11 A

0.034

0.049

0.05

0.06

Ω

ID(on)

On State Drain Current VDS > ID(on) x RDS(on)max

VGS = 10 V

22

A

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (

∗)

Forward

Transconductance

VDS > ID(on) x RDS(on)max

ID =11 A

7

13

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25 V

f = 1 MHz

VGS = 0

680

160

60

950

220

85

pF

STP22NE03L

2/5

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