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TS472IQT データシート(PDF) 6 Page - STMicroelectronics |
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TS472IQT データシート(HTML) 6 Page - STMicroelectronics |
6 / 24 page Electrical characteristics TS472 6/24 4 Electrical characteristics Table 5. Electrical characteristics at VCC = 3V with GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit en Equivalent input noise voltage density REQ=100Ω at 1KHz 10 THD+N Total harmonic distortion + noise 20Hz ≤F ≤ 20kHz, Gain=20dB, Vin=50mVRMS 0.1 % Vin Input voltage, Gain=20dB 10 70 mVRMS BW Bandwidth @ -3dB Bandwidth @ -1dB pin A3, B3 floating 40 20 kHz G Overall output voltage gain (Rgs variable): Minimum gain, Rgs infinite Maximum gain, Rgs=0 -3 39.5 -1.5 41 0 42.5 dB Zin Input impedance referred to GND 80 100 120 k Ω RLOAD Resistive load 10 k Ω CLOAD Capacitive load 100 pF ICC Supply current, Gain=20dB 1.8 2.4 mA ISTBY Standby current 1 μA PSRR Power supply rejection ratio, Gain=20dB, F=217Hz, Vripple=200mVpp, inputs grounded Differential output Single-ended outputs, -70 -46 dB Table 6. Bias output: VCC = 3V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Vout No load condition 1.9 2 2.1 V Rout Output resistance 80 100 120 W Iout Output bias current 2 mA PSRR Power supply rejection ratio, F=217Hz, Vripple=200mVpp 70 80 dB nV Hz ------------ |
同様の部品番号 - TS472IQT |
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同様の説明 - TS472IQT |
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