データシートサーチシステム |
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STP2N80 データシート(PDF) 3 Page - STMicroelectronics |
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STP2N80 データシート(HTML) 3 Page - STMicroelectronics |
3 / 10 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD =400 V ID =1.5 A RG =50 Ω VGS =10 V (see test circuit, figure 3) 38 42 50 57 ns ns (di/dt) on Turn-on Current Slope VDD =640 V ID =2 A RG =50 Ω VGS =10 V (see test circuit, figure 5) 160 A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 640 V ID =2 A VGS =10 V 31 6 14 40 nC nC nC SWITCHING OFF Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit tr(Voff) tf tc Of f-voltage Rise Time Fall Time Cross-over Time VDD =640 V ID =2 A RG =50 Ω VGS =10 V (see test circuit, figure 5) 70 25 108 90 32 140 ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit ISD I SDM( •) Source-drain Current Source-drain Current (pulsed) 2.4 9.6 A A VSD ( ∗) Forward On Volt age ISD =2.4 A VGS =0 2 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =2 A di/dt =100 A/ µs VDD = 100 V Tj =150 oC (see test circuit, figure 5) 920 18.4 40 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220 STP2N80/FI 3/10 |
同様の部品番号 - STP2N80 |
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同様の説明 - STP2N80 |
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