STG3P2M10N60B datasheet(4/12 Pages) STMICROELECTRONICS

部品番号	STG3P2M10N60B

部品情報	1-Phase bridge rectifier 3 phase inverter IGBT - SEMITOP 2 module

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Electrical characteristics

STG3P2M10N60B

4/12

2

Electrical characteristics

(TS=25°C unless otherwise specified)

Table 3.

Static

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-emitter

breakdown voltage

IC= 1mA, VGE= 0

600

V

ICES

Collector cut-off current

(VGE = 0)

VCE= Max rating,TS= 25°C

VCE=Max rating,TS= 125°C

10

1

µA

mA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE= ±20V , VCE= 0

±100

nA

VGE(th)

Gate Threshold Voltage

VCE= VGE, IC= 250µA

3.75

5.75

V

VCE(sat)

Collector-emitter saturation

voltage

VGE= 15V, IC= 7A

VGE= 15V, IC= 7A, Tc= 125°C

1.85

1.7

2.5

V

Table 4.

Dynamic

Symbol

Parameter

Test condictions

Min.

Typ.

Max.

Unit

gfs

(1)

1.

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VCE = 15V, IC= 7A

4.30

S

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25V, f = 1MHz,

VGE = 0

720

81

17

pF

Qg

Qge

Qgc

Total gate charge

Gate-emitter charge

Gate-collector charge

VCE = 390V, IC = 5A,

VGE = 15V, (see Figure 8)

35

7

16

48

nC

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