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STG3P2M10N60B データシート(PDF) 4 Page - STMicroelectronics |
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STG3P2M10N60B データシート(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STG3P2M10N60B 4/12 2 Electrical characteristics (TS=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test condictions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC= 1mA, VGE= 0 600 V ICES Collector cut-off current (VGE = 0) VCE= Max rating,TS= 25°C VCE=Max rating,TS= 125°C 10 1 µA mA IGES Gate-Emitter Leakage Current (VCE = 0) VGE= ±20V , VCE= 0 ±100 nA VGE(th) Gate Threshold Voltage VCE= VGE, IC= 250µA 3.75 5.75 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 7A VGE= 15V, IC= 7A, Tc= 125°C 1.85 1.7 2.5 V V Table 4. Dynamic Symbol Parameter Test condictions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward transconductance VCE = 15V, IC= 7A 4.30 S Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 720 81 17 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 8) 35 7 16 48 nC nC nC |
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