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STP40N03L-20 データシート(PDF) 2 Page - STMicroelectronics |
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STP40N03L-20 データシート(HTML) 2 Page - STMicroelectronics |
2 / 7 page THERMAL DATA Rthj-ca se Rthj- amb Rthc-si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead T emperature For Soldering Purpose 1.66 62.5 0.5 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symb ol Parameter Max Valu e Uni t IAR Avalanche Current , Repet itive or Not -Repetitive (pulse widt h limited by Tj max, δ <1%) 40 A EAS Single Pulse Avalanche Energy (starting Tj =25 oC, I D =IAR,VDD =25 V ) 300 mJ EAR Repetit ive Avalanche Energy (pulse widt h limited by Tj max, δ <1%) 75 mJ IAR Avalanche Current , Repet itive or Not -Repetitive (Tc =100 oC, pulse width limited by Tj max, δ <1%) 28 A ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) OFF Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it V(BR)DSS Drain-source Breakdown Volt age ID = 250 µAVGS =0 30 V IDSS Zero Gat e Voltage Drain Current (VGS =0) VDS =Max Rating VDS =Max Rating x0.8 Tc = 125 oC 250 1000 µA µA IGSS Gate-body Leakage Current (VDS =0) VGS = ± 15 V ± 100 nA ON ( ∗) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it VGS(th) Gate T hreshold Voltage VDS =VGS ID =250 µA1 1.6 2 V RDS( on) St atic Drain-source On Resistance VGS = 10V ID =20 A VGS = 10V ID =20 A Tc =100 oC VGS =5V ID =20 A 0.016 0.019 0.02 0.04 0. 023 Ω Ω Ω ID(o n) On Stat e Drain Current VDS >ID(on) xRDS(on) max VGS =10 V 40 A DYNAMIC Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it gfs ( ∗)Forward Transconductance VDS >ID(on) xRDS(on) max ID =20 A 15 22 S Ciss Coss Crss Input Capacitance Output Capacit ance Reverse Transfer Capacitance VDS = 25V f = 1MHz VGS = 0 1800 450 180 2300 580 230 pF pF pF STP40N03L-20 2/7 |
同様の部品番号 - STP40N03L-20 |
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同様の説明 - STP40N03L-20 |
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