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ST662ABD-TRY データシート(PDF) 11 Page - STMicroelectronics |
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ST662ABD-TRY データシート(HTML) 11 Page - STMicroelectronics |
11 / 19 page ST662AB - ST662AC Application circuit 11/19 7 Application circuit Based on fast charge/discharge of capacitors, this circuit involves high di/dt values limited only by RON of switches. This implies a critical layout design due to the need to minimize inductive paths and place capacitors as close as possible to the device. A good layout design is strongly recommended for noise reason. For best performance, use very short connections to the capacitors and the values shown in Table 7 C3 and C4 must have low ESR in order to minimize the output ripple. Their values can be reduced to 2 µF and 1 µF, respectively, when using ceramic capacitors, but must be of 10 µF or larger if aluminium electrolytic are chosen. C5 must be placed as close to the device as possible and could be omitted if very low output noise performance are not required. Figure 15 and Figure 16 show, respectively, our EVALUATION kit layout and the relatively. Figure 15. KIT layout Figure 16. Electrical schematic |
同様の部品番号 - ST662ABD-TRY |
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同様の説明 - ST662ABD-TRY |
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