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STB40NF10-1 データシート(PDF) 3 Page - STMicroelectronics |
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STB40NF10-1 データシート(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STP40NF10 - STB40NF10 - STB40NF10-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 50 V, ID = 20 A RG = 4.7Ω VGS = 10V (see test circuit, Figure 3) 28 ns tr Rise Time 63 ns Qg Total Gate Charge VDD = 80V, ID =40A,VGS = 10V 60 80 nC Qgs Gate-Source Charge 10 nC Qgd Gate-Drain Charge 23 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off-Delay Time Fall Time VDD = 50 V, ID = 20 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 3) 84 28 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 40 A ISDM (2) Source-drain Current (pulsed) 160 A VSD (1) Forward On Voltage ISD = 40 A, VGS = 0 1.3 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 40 A, di/dt = 100A/µs, VDD = 25V, Tj = 150°C (see test circuit, Figure 5) 114 456 8 ns nC A Thermal Impedance Safe Operating Area |
同様の部品番号 - STB40NF10-1 |
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同様の説明 - STB40NF10-1 |
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