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STP4N100 データシート(PDF) 1 Page - STMicroelectronics |
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STP4N100 データシート(HTML) 1 Page - STMicroelectronics |
1 / 10 page STP4N100 STP4N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR s TYPICAL RDS(on) = 3.1 Ω s AVALANCHE RUGGED TECHNOLOGY s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100 oC s LOW INPUT CAPACITANCE s LOW GATE CHARGE s APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s CONSUMER AND INDUSTRIAL LIGHTING s DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM TYPE VDSS R DS(on) ID STP4N100 STP4N100FI 1000 V 1000 V <3. 5 Ω <3. 5 Ω 4A 2.2 A 1 2 3 TO-220 ISOWATT220 December 1996 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Unit STP4N100 STP4N100FI VDS Drain-source Voltage (VGS = 0) 1000 V VDG R Drain- gate Voltage (RGS =20 k Ω) 1000 V VGS Gate-source Voltage ± 20 V ID Drain Current (cont inuous) at T c =25 oC4 2.2 A ID Drain Current (cont inuous) at T c =100 oC2.5 1.4 A IDM( •) Drain Current (pulsed) 16 16 A Ptot Total Dissipation at Tc =25 oC 125 40 W Derating Factor 1 0.32 W/ oC VISO I nsulat ion Withstand Voltage (DC) 2000 V Tstg St orage Temperat ure -65 to 150 oC Tj Max. Operat ing Junction Temperature 150 oC ( •) Pulse width limited by safe operating area 1 2 3 1/10 |
同様の部品番号 - STP4N100 |
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同様の説明 - STP4N100 |
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