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STP4NB50FP データシート(PDF) 2 Page - STMicroelectronics |
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STP4NB50FP データシート(HTML) 2 Page - STMicroelectronics |
2 / 7 page STP4NB50 - STP4NB50FP 2/7 THERMAL DATA AVALANCHE CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF ON (1) DYNAMIC TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 1.56 3.57 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 °C Symbol Parameter Max Value Unit IAR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) 3.8 A EAS Single Pulse Avalanche Energy (starting Tj = 25 °C, ID =IAR,VDD =50 V) 220 mJ Symbol Parameter Test Conditions Min. Typ. Max. Unit V(BR)DSS Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 500 V IDSS Zero Gate Voltage Drain Current (VGS =0) VDS = Max Rating 1µA VDS = Max Rating, TC = 125 °C 50 µA IGSS Gate-body Leakage Current (VDS =0) VGS = ±30V ±100 nA Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS(th) Gate Threshold Voltage VDS =VGS,ID = 250µA 234 V RDS(on) Static Drain-source On Resistance VGS =10V, ID = 1.9 A 2.5 2.8 Ω Symbol Parameter Test Conditions Min. Typ. Max. Unit gfs (1) Forward Transconductance VDS >ID(on) xRDS(on)max, ID = 1.9 A 2.3 S Ciss Input Capacitance VDS = 25V,f= 1MHz,VGS =0 400 pF Coss Output Capacitance 62 pF Crss Reverse Transfer Capacitance 7.5 pF |
同様の部品番号 - STP4NB50FP |
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同様の説明 - STP4NB50FP |
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