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STP4NC80ZFP データシート(PDF) 1 Page - STMicroelectronics |
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STP4NC80ZFP データシート(HTML) 1 Page - STMicroelectronics |
1 / 13 page 1/13 December 2002 STP4NC80Z - STP4NC80ZFP STB4NC80Z - STB4NC80Z-1 N-CHANNEL 800V - 2.4 Ω - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET (1)ISD ≤4A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX .(*)Pulse width Limited by maximum temperature allowed TO-220 1 2 3 TO-220FP 1 2 3 I2PAK (Tabless TO-220) 1 3 D2PAK s TYPICAL RDS(on) = 2.4 Ω s EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES s 100% AVALANCHE TESTED s VERY LOW GATE INPUT RESISTANCE s GATE CHARGE MINIMIZED DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area TYPE VDSS RDS(on) ID STP4NC80Z/FP 800V < 2.8 Ω 4A STB4NC80Z/-1 800V < 2.8 Ω 4A Symbol Parameter Value Unit STP(B)4NC80Z(-1) STP4NC80ZFP VDS Drain-source Voltage (VGS =0) 800 V VDGR Drain-gate Voltage (RGS =20kΩ) 800 V VGS Gate- source Voltage ± 25 V ID Drain Current (continuos) at TC = 25°C 4 4(*) A ID Drain Current (continuos) at TC = 100°C 2.5 2.5(*) A IDM (q) Drain Current (pulsed) 16 16(*) A PTOT Total Dissipation at TC = 25°C 100 35 W Derating Factor 0.8 0.28 W/°C IGS Gate-source Current ±50 mA VESD(G-S) Gate source ESD(HBM-C=100pF, R=15K Ω) 2.5 KV dv/dt(1) Peak Diode Recovery voltage slope 3 V/ns VISO Insulation Winthstand Voltage (DC) -- 2000 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C |
同様の部品番号 - STP4NC80ZFP |
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同様の説明 - STP4NC80ZFP |
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