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TC3943 データシート(PDF) 1 Page - Transcom, Inc. |
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TC3943 データシート(HTML) 1 Page - Transcom, Inc. |
1 / 2 page TC3943 REV2_20070503 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 2 0.5W Single-Bias and Prematched GaAs Power PHEMTs using SMT package FEATURES PHOTO ENLARGEMENT • Prematched for 5~10 GHz • 0.5W Typical Output Power at 5~10GHz • 7dB Typical Linear Power Gain at 10GHz • High Linearity: IP3 = 37 dBm Typical at 5~10GHz • High Power Added Efficiency: Nominal PAE of 30% at 5~10GHz • Breakdown Voltage: BV DGO ≥ 15V • Wg = 1.2 mm • 100 % DC Tested • Suitable for High Reliability Application • Lost Cost SMT Ceramic Package DESCRIPTION The TC3943 is a Single-bias and prematched GaAs PHEMT. It is designed for use in low cost, high volume, and 5~10 GHz 0.5W amplifiers. It provides a typical gain of 7dB and P1dB of 27dBm at 10GHz. The single positive drain bias is 8V and the typical drain-source current is 150mA. The device is packaged in copper based ceramic 10 pins SMT packages. The copper based carrier of the package allows direct soldering of the device to the PCB. ELECTRICAL SPECIFICATIONS (TA=25℃ ℃ ℃ ℃) Symbol CONDITIONS MIN TYP MAX UNIT P1dB Output Power at 1dB Gain Compression Point, f = 10GHz VDS = 8V 26 27 dBm GL Linear Power Gain, f = 10GHz VDS = 8V 6 7 dB IP3 Intercept Point of the 3 rd-order Intermodulation, f = 10GHz V DS = 8V, *PSCL = 14 dBm 37 dBm PAE Power Added Efficiency at 1dB Compression Power, f = 10GHz 30 % IDS Drain-Source Current at VDS = 8V 150 mA BVDGO Drain-Gate Breakdown Voltage at IDGO = 0.6mA 15 18 Volts Note: *PSCL: Output Power of Single Carrier Level. |
同様の部品番号 - TC3943 |
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同様の説明 - TC3943 |
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