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STB75NF75L-1 データシート(Datasheet) 3 Page - STMicroelectronics

部品番号. STB75NF75L-1
部品情報  N-CHANNEL 75V - 0.009 ohm - 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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3/11
STB75NF75L/-1 STP75NF75L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 40 V
ID = 37.5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 3)
35
150
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 60V ID = 75 A VGS= 5V
75
18
31
90
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 40 V
ID = 37.5 A
RG = 4.7Ω,
VGS = 4.5 V
(Resistive Load, Figure 3)
110
60
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
75
300
A
A
VSD (*)
Forward On Voltage
ISD = 75 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 75 A
di/dt = 100A/µs
VDD = 20 V
Tj = 150°C
(see test circuit, Figure 5)
100
380
7.5
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance




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