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FDPF3860T データシート(PDF) 1 Page - Fairchild Semiconductor |
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FDPF3860T データシート(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page tm March 2008 ©2008 Fairchild Semiconductor Corporation FDPF3860T Rev. A www.fairchildsemi.com 1 FDPF3860T N-Channel PowerTrench® MOSFET 100V, 20A, 38.2m Ω Description •RDS(on) = 38.2mΩ ( MAX ) @ VGS = 10V, ID = 5.9A • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(on) • High power and current handling capability • RoHS compliant General Description This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to AC converters / Synchronous Rectification D G S TO-220F G S D MOSFET Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGSS Gate to Source Voltage ±20 V ID Drain Current - Continuous (TC = 25 oC) 20 A - Continuous (TC = 100 oC) 12.7 IDM Drain Current - Pulsed (Note 1) 80 A EAS Single Pulsed Avalanche Energy (Note 2) 278 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 3.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 15 V/ns PD Power Dissipation (TC = 25 oC) 33.8 W - Derate above 25oC0.27 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 3.7 oC/W RθJA Thermal Resistance, Junction to Ambient 62.5 |
同様の部品番号 - FDPF3860T |
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同様の説明 - FDPF3860T |
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