データシートサーチシステム |
|
FDB024N06 データシート(PDF) 4 Page - Fairchild Semiconductor |
|
FDB024N06 データシート(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDB024N06 Rev. A3 www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 1.15 *Notes: 1. VGS = 0V 2. ID = 10mA TJ, Junction Temperature [ o C] -100 -50 0 50 100 150 200 0.4 0.8 1.2 1.6 2.0 *Notes: 1. VGS = 10V 2. ID = 75A TJ, Junction Temperature [ o C] 110 100 0.1 1 10 100 1000 10µs 100µs 1ms 10ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 o C 2. TJ = 175 o C 3. Single Pulse DC 25 50 75 100 125 150 175 0 50 100 150 200 250 300 TC, Case Temperature [ o C] Limited by package 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *Notes: 1. ZθJC(t) = 0.38 o C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5 Single pulse Rectangular Pulse Duration [sec] 0.005 t1 PDM t2 |
同様の部品番号 - FDB024N06 |
|
同様の説明 - FDB024N06 |
|
|
リンク URL |
プライバシーポリシー |
ALLDATASHEET.JP |
ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |